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Brand > GPT
GPT is a SiC power devices manufacturer in China which establishedin 2011. With headquarter in Beijing, GPT has two completed4 / 6-inch SiC power devices production lines with IDM mode.The company's products have been widely used in PC powersupply, PV inverter, charge module, OBC, DC-DC and otherfields. GPT quality system certification: ISO / IATF 16949 / RoHS /Reach / UL / DNV ` GL and USCG / AEC-Q101, etc. The qualityof GPT products can fully match various clients' demand.With Beijing and Liuyang, Hunan production lines, GPT hasbranch offices in Shanghai and Shenzhen. Company also haveglobal channels in USA, Europe, Singapore, South Korea, Japanand Russia to provide service support. In the future,GPT will acceleratethe improvement of comprehensive strength and marketcompetitiveness through the leapfrog development of capitalstrength, asset scale and business development, so as to expand todomestic and international market share. GPT's SiC devices cover 650V / 1200V / 1700V / 3300V (1A-100A). Silicon carbide devices have been regarded as the third generation semiconductordevices after Silicon and GaAs semiconductor materials with its low power loss and stablehigh temperature performance. Silicon carbide power devices can be widely used in thefield of power control and management. These devices outperform in power supplies forhigher efficiency, smaller size and better operating frequency. Silicon carbide devices are mainly used in:>>>Power Factor Correction>>>DC / AC converters for solar / wind power>>>Industrial Motor Drivers>>>Charge Block for Electric Cars>>>Output Rectification>>>Electrical House Hold Appliances Quality Certification: ISO9001, IATF 16949 / RoHS / Reach / UL / DNV ` GL /USCG / ACE-Q101, etc. Advantages: It can replace silicon diode, reduce the requirement of heat dissipation insystem with low switching loss and high efficiency. Working Temperature TJ: - 55C-200c (Plastic Package - 55C- 175'C) Package: Provide TO220, TO220 full package, TO220 internal insulation, to247-2l,to247-3l, TO247-4l. TO252, TO263-2, TO263-7, DFN8 * 8, SOD123 and other plasticpackage.
Twotriode二三极管 G3S06508A TO-220AC 150mm Silicon Carbide Schottky Diode 碳化硅肖特基二极管G3S06508A TO-220AC 150mm
GPT
Twotriode二三极管 G3S06504A TO-220AC 150mm Silicon Carbide Schottky Diode 碳化硅肖特基二极管G3S06504A TO-220AC 150mm
GPT
Twotriode二三极管 G3S06010J TO-220 ISO Silicon Carbide Schottky Diode 碳化硅肖特基二极管G3S06010J TO-220 ISO
GPT
Twotriode二三极管 G3S06008J TO-220 ISO Silicon Carbide Schottky Diode 碳化硅肖特基二极管G3S06008J TO-220 ISO
GPT
Twotriode二三极管 G3S06006J TO-220 ISO Silicon Carbide Schottky Diode 碳化硅肖特基二极管G3S06006J TO-220 ISO
GPT
Twotriode二三极管 G3S06004J TO-220 ISO Silicon Carbide Schottky Diode 碳化硅肖特基二极管G3S06004J TO-220 ISO
GPT
Twotriode二三极管 G5S12020PM TO-247AC 150mm Silicon Carbide Schottky Diode 碳化硅肖特基二极管G5S12020PM TO-247AC 150mm
GPT
Twotriode二三极管 G4S6508Z DFN5*6 Silicon Carbide Schottky Diode 碳化硅肖特基二极管G4S6508Z DFN5*6
GPT
Twotriode二三极管 G3S06505R TO-252 Silicon Carbide Schottky Diode 碳化硅肖特基二极管G3S06505R TO-252
GPT
Two triode 二三极管 G5S12015PM TO-247AC Silicon Carbide Schottky Diode 碳化硅肖特基二极管G5S12015PM
GPT
Two triode 二三极管 G51XT 650V 1A SOD-123 Silicon Carbide Schottky Diode 碳化硅肖特基二极管G51XT 650V 1A
GPT
Two triode 二三极管 G4S06508JT 650V 8A TO220ISO Silicon Carbide Schottky Diode 碳化硅肖特基二极管G4S06508JT 650V 8A
GPT
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Shenzhen Jasencan Electronics Limited
Contact: Manager Hu
Phone: 86-18778283739
Tel: 86-755-8328-5269
Fax: 86-755-8328-6455
QQ:2881718760
Email: sales@jasencan.com
Url:  www.jasencan.com
Add:1307, Building A, Chuangzhiyun Center, No. 1, Guangxia Road, Meiting Community, Meilin Street, Futian District, Shenzhen, Guangdong Province
,518046


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