| ID |
PDF |
图片 |
名称 |
Mfg(制造商) |
Part#(制造商零件编号) |
Qty(数量) |
D/C(批次) |
Packing(封装) |
Des(描述) |
| 3681 |
 |
 |
场效应管MOSFET |
WAYON(维安) |
WMK3N150D1 TO-220 |
50 |
New |
TO-220 |
WMK3N150D1 TO-220 MOSFET 场效应管 |
| 3680 |
 |
 |
场效应管MOSFET |
WAYON(维安) |
WMX3N150D1 TO-3PF |
30 |
New |
TO-3PF |
WMX3N150D1 TO-3PF MOSFET 场效应管 |
| 3679 |
 |
 |
场效应管MOSFET |
SALLTECH(萨瑞微) |
SG730A10P4 DFN2020B-8L |
3000 |
New |
DFN2020B-8L |
SG730A10P4 DFN2020B-8L MOSFET 场效应管 |
| 2115 |
- |
 |
Two triode 二三极管 |
GPT(泰科天润) |
G4S06508JT 650V 8A |
1000 |
New |
TO-220ISO |
G4S06508JT 650V 8A TO220ISO Silicon Carbide Schottky Diode 碳化硅肖特基二极管 |
| 2114 |
- |
 |
Two triode 二三极管 |
GPT(泰科天润) |
G4S06515QT 650V 15A |
1000 |
New |
DFN |
G4S06515QT 650V 15A DFN Silicon Carbide Schottky Diode 碳化硅肖特基二极管 |
| 2113 |
- |
 |
Two triode 二三极管 |
GPT(泰科天润) |
G4S06508QT 650V 8A |
1000 |
New |
DFN |
G4S06508QT 650V 8A DFN Silicon Carbide Schottky Diode 碳化硅肖特基二极管 |
| 2112 |
- |
 |
Two triode 二三极管 |
GPT(泰科天润) |
G4S06510QT 650V 10A |
1000 |
New |
DFN |
G4S06510QT 650V 10A DFN Silicon Carbide Schottky Diode 碳化硅肖特基二极管 |
| 2110 |
- |
 |
Two triode 二三极管 |
GPT(泰科天润) |
G4S06515HT 650V 15A |
1000 |
New |
TO-220F |
G4S06515HT 650V 15A TO-220F Silicon Carbide Schottky Diode 碳化硅肖特基二极管 |
| 2109 |
- |
 |
Two triode 二三极管 |
GPT(泰科天润) |
G4S06510DT 650V 10A |
1000 |
New |
TO-263 |
G4S06510DT 650V 10A TO-263 Silicon Carbide Schottky Diode 碳化硅肖特基二极管 |
| 2108 |
- |
 |
Two triode 二三极管 |
GPT(泰科天润) |
G4S06508DT 650V 8A |
1000 |
New |
TO-263 |
G4S06508DT 650V 8A TO-263 Silicon Carbide Schottky Diode 碳化硅肖特基二极管 |
| 2107 |
- |
 |
Two triode 二三极管 |
GPT(泰科天润) |
G5S12002H 1200V 2A |
1000 |
New |
TO-220 |
G5S12002H 1200V 2A TO-220 Silicon Carbide Schottky Diode 碳化硅肖特基二极管 |
| 2106 |
- |
 |
Two triode 二三极管 |
GPT(泰科天润) |
G5S12002R 1200V 2A |
1000 |
New |
TO-252 |
G5S12002R 1200V 2A TO-252 Silicon Carbide Schottky Diode 碳化硅肖特基二极管 |